The effect of second subband occupation on the thermopower of a high mobility GaAs-Al0.33Ga0.67As heterojunction
- 1 January 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (1) , 54-58
- https://doi.org/10.1088/0268-1242/6/1/010
Abstract
By the use of persistent photoconductivity and magnetic depopulation the authors have investigated the effect on the thermopower S of sweeping the Fermi energy EF through the bottom of the second electric subband in a 2D electron gas. The data were taken in the 4He temperature range where phonon drag is expected to dominate. For a given electron density, the absolute magnitude of S increases when EF moves into the second subband. At high magnetic fields and low temperatures a strong negative peak appears in S when EF coincides with the bottom of the second subband; this peak is of opposite sign to that which has been predicted to occur in the diffusion thermopower.Keywords
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