Parallel transport in a quasi-two-dimensional electron gas subjected to an in-plane magnetic field
- 20 June 1988
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 21 (17) , 3313-3322
- https://doi.org/10.1088/0022-3719/21/17/020
Abstract
The transport coefficients Rxx and Sxx are calculated for electrons confined to a parabolic potential well Vc(z)=a2z2 and subjected to an in-plane magnetic field B=(B,0,0). A Boltzmann transport formalism is used to develop general formulae for all the transport coefficients in the presence of delta -function scatterers. The anisotropic scattering lifetime when B not=0 is evaluated. It allows an immediate calculation of Rxx and Sxx, which show the structure expected with increasing B as successive sub-band minima pass through the Fermi level. In particular Sxx exhibits a sign change and the behaviour of Rxx is consistent with recent experimental data. The formulae for Ryy and Syy requires the numerical iterative calculation of a renormalised velocity in the y direction for their evaluation.Keywords
This publication has 9 references indexed in Scilit:
- High magnetic field characterisation of (Hg, Cd)Te surface layersJournal of Crystal Growth, 1988
- Landau levels near an ideal interfaceJournal of Physics C: Solid State Physics, 1987
- Magnetic depopulation of electronic subbands in low-dimensional semiconductor systems and their influence on the electrical resistivity and Hall effectSemiconductor Science and Technology, 1986
- Magnetic Depopulation of 1D Subbands in a Narrow 2D Electron Gas in a GaAs:AlGaAs HeterojunctionPhysical Review Letters, 1986
- Lifetime broadening of sub-band structure in the electrical conductivity of narrow-channel systemsJournal of Physics C: Solid State Physics, 1985
- The effect of sub-band structure on the sign of the thermopower of electrons in a quantum wellJournal of Physics C: Solid State Physics, 1985
- Effects of quantum confinement in a special GaAs field effect transistor: on the DC conductance in the regime of metallic transportJournal of Physics C: Solid State Physics, 1985
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Properties of Electrons in Semiconductor Inversion Layers with Many Occupied Electric Subbands. I. Screening and Impurity ScatteringPhysical Review B, 1970