Properties Of Heteroepitaxial 3c-SiC Films Grown by LPCVD
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 190-193
- https://doi.org/10.1109/sensor.1995.721777
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Atomic level epitaxy of 3C-SiC by low pressure vapour deposition with alternating gas supplyThin Solid Films, 1993
- Properties Of SiC Film As X-Ray Mask MembraneMRS Proceedings, 1993
- Mechanical properties of 3C silicon carbideApplied Physics Letters, 1992
- SiC mask membrane for synchrotron radiation lithographyMicroelectronic Engineering, 1990