Electron energy loss spectroscopy studies of the Si-SiO2 interface
- 15 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (2) , 199-201
- https://doi.org/10.1063/1.91036
Abstract
We have performed, for the first time, measurements of the electronic structure of the Si‐SiO2 interface with electron energy loss spectroscopy (ELS) in connection with argon‐ion sputtering. We have measured the depth profiles of both the 5.1‐ and 7.2‐eV ELS peaks, which have been previously observed for both the Si surface with oxygen adsorbed and SiO2 with defects present. We have found that the intensities of these peaks, especially that of the 5.1‐eV peak, show a maximum at the Si‐SiO2 interface. This suggests that these ELS peaks come from special bonding configurations characteristic of the connective layer between Si and SiO2 at the interface.Keywords
This publication has 10 references indexed in Scilit:
- Observation of an intermediate chemical state of silicon in the Si/SiO2 interface by Auger sputter profilingApplied Physics Letters, 1978
- New studies of the Si-SiO2 interface using auger sputter profilingSolid State Communications, 1978
- Interactions of water vapor and oxygen with Si(111) surfaces studied by low-energy electron-loss spectroscopyJournal of Applied Physics, 1977
- Auger depth profiling of MNOS structures by ion sputteringIEEE Transactions on Electron Devices, 1977
- An Auger analysis of the SiO2-Si interfaceJournal of Applied Physics, 1976
- The probing depth in photoemission and auger-electron spectroscopyJournal of Electron Spectroscopy and Related Phenomena, 1974
- Photoemission and electron energy loss spectroscopy of GeO2 and SiO2Applied Physics Letters, 1974
- Electron orbital energies of oxygen adsorbed on silicon surfaces and of silicon dioxidePhysical Review B, 1974
- Electronic transitions of oxygen adsorbed on clean silicon (111) and (100) surfacesPhysical Review B, 1974
- Surface-State Transitions of Silicon in Electron Energy-Loss SpectraPhysical Review Letters, 1973