Fabrication and doping of poly-SiGe using excimer-laser processing
- 1 August 1994
- journal article
- surfaces and-multilayers
- Published by Springer Nature in Applied Physics A
- Vol. 59 (2) , 203-207
- https://doi.org/10.1007/bf00332218
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Post-growth annealing of low temperature-grown Sb-doped Si molecular beam epitaxial filmsApplied Physics Letters, 1992
- Optical spectra of SixGe1−x alloysJournal of Applied Physics, 1989
- A thermal description of the melting of c- and a-silicon under pulsed excimer lasersApplied Surface Science, 1989
- Silicon-germanium alloys and heterostructures: Optical and electronic propertiesCritical Reviews in Solid State and Materials Sciences, 1989
- Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctionsJournal of Applied Physics, 1987
- Properties of a‐Si,Ge:H,F alloys prepared by rf glow discharge in an ultrahigh vacuum reactorJournal of Vacuum Science & Technology A, 1986
- Rapid solidification studies of a model alloy systemApplied Physics Letters, 1986
- Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperaturesApplied Physics Letters, 1982
- The lateral diffusion of boron in polycrystalline silicon and its influence on the fabrication of sub-micron MOSTsSolid-State Electronics, 1977
- Diffusion of Impurities in Polycrystalline SiliconJournal of Applied Physics, 1972