The lateral diffusion of boron in polycrystalline silicon and its influence on the fabrication of sub-micron MOSTs
- 31 December 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (12) , 985-992
- https://doi.org/10.1016/0038-1101(77)90208-8
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Improved yields for MOST’s using ion implantationJournal of Applied Physics, 1976
- Investigation of polycrystalline silicon layers by electron microscopy and x-ray diffractionSolid-State Electronics, 1975
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- Electrical characteristics of boron diffused polycrystalline silicon layersSolid-State Electronics, 1975
- Boron diffusion in polycrystalline silicon layersSolid-State Electronics, 1975
- Fabrication of submicron polysilicon lines by conventional techniquesApplied Physics Letters, 1975
- Diffusion of Impurities in Polycrystalline SiliconJournal of Applied Physics, 1972
- Ethylene Diamine-Pyrocatechol-Water Mixture Shows Etching Anomaly in Boron-Doped SiliconJournal of the Electrochemical Society, 1971
- Silicon gate technologySolid-State Electronics, 1970
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961