Electrical characteristics of boron diffused polycrystalline silicon layers
- 31 August 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (7-8) , 659-665
- https://doi.org/10.1016/0038-1101(75)90137-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Resistivity of Doped Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1973
- Resistivity of chemically deposited polycrystalline-silicon filmsSolid-State Electronics, 1972
- Diffusion of Impurities in Polycrystalline SiliconJournal of Applied Physics, 1972
- Chemical Vapor Deposited Polycrystalline SiliconJournal of the Electrochemical Society, 1972
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971
- Properties of Polycrystalline Silicon Deposited on Silicon Nitride LayersJournal of the Electrochemical Society, 1971
- Silicon-gate technologyIEEE Spectrum, 1969
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961
- Diffusion of phosphorus in silicon oxide filmJournal of Physics and Chemistry of Solids, 1959