Electronic subbands for AlxGa1−xAs/GaAs multilayer and superlattice structures

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Abstract
We have carried out calculations of the conduction bandstructure for GaAs/AlxGa1−xAs (0<x≤1) multilayer structures with very thin layers. We report results for the case of a small number of layers for which the quasi‐continuous bandstructure of a large superlattice is a poor approximation. Using a multivalley effective mass approach which includes nonparabolicity, we find that for large aluminum concentrations and thin layers the lowest bound state is derived from the X valley and is localized mainly in the alloy layers. The structures investigated have a range of design parameters which is useful for superlattice modulation‐doped field‐effect transistors.