Energy Levels of Defects in Ion Implanted Silicon
- 1 January 1971
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- MINORITY CARRIER LIFETIME IN ION-IMPLANTED AND ANNEALED SILICONApplied Physics Letters, 1970
- Determination of deep centers in silicon by thermally stimulated conductivity measurementsSolid-State Electronics, 1969
- DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1969
- A Technique for Trap Determinations in Low-Resistivity SemiconductorsJournal of Applied Physics, 1968
- Thermally Stimulated Conductivity of Neutron-Irradiated SiliconJournal of Applied Physics, 1965