Quantum dot resonant cavity light emitting diodeoperating near 1300 nm
- 4 February 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (3) , 242-243
- https://doi.org/10.1049/el:19990114
Abstract
The first demonstration of resonant cavity enhancement of optical emission from an InAs/GaAs quantum dot light emitting diode is reported. For emission around 1300 nm, efficiency enhancements of greater than 10 for low current injection and greater than 3 for higher current injection for light coupled into a multimode optical fibre are observed.Keywords
This publication has 4 references indexed in Scilit:
- Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dotsApplied Physics Letters, 1998
- Temperature and modulation characteristics of resonant-cavity light-emitting diodesJournal of Lightwave Technology, 1996
- 16% external quantum efficiency from planar microcavityLEDsat 940 nm by precise matching of cavity wavelengthElectronics Letters, 1995
- Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant-cavity light-emitting diodeApplied Physics Letters, 1992