The Effect of Pressure on Deep Impurity States with Large Lattice Relaxation
- 1 March 1985
- journal article
- review article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 128 (1) , 11-22
- https://doi.org/10.1002/pssb.2221280102
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Pressure Study of Photoconductivity in Indium Antimonide I. Low‐Concentration n‐Type at 77 K. Pressure‐Dependent Capture Coefficient of a Hole‐Trapping CenterPhysica Status Solidi (b), 1984
- Deep levels in semiconductors — Influence of hydrostatic pressurePhysica B+C, 1983
- Synthesis of Fluorinated Derivatives of 4-Hydroxycoumarin and ChromoneSynthesis, 1983
- Capture and emission of electrons by the resonant state strongly coupled to the lattice in-InSbPhysical Review B, 1982
- Non-radiative transitions in semiconductorsReports on Progress in Physics, 1981
- Deep levels in semiconductorsAdvances in Physics, 1980
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Pressure‐Induced Slow Relaxation of the Free Electron Concentration in Undoped n‐Type InSbPhysica Status Solidi (b), 1976
- Evidence from Transport Measurements at High Pressures for Donor Ions Occupying Non‐Equivalent Lattice Positions in InSbPhysica Status Solidi (b), 1974
- Zwischenmolekulare Energiewanderung und FluoreszenzAnnalen der Physik, 1948