A 1.3-µm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
- 1 December 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (12A) , L1355
- https://doi.org/10.1143/jjap.38.l1355
Abstract
A 1.3-µm-range GaInNAs/GaAs single-quantum-well laser was tested for 1000 hours at 24°C under an auto-current-control condition. No degradation was observed. The threshold current fell slightly (14%). The lasing wavelength was stable. The lack of rapid degradation under an auto-power-control condition at a high temperature (50°C) suggests that a reliable GaInNAs laser diode with a practical lifetime may soon be realized.Keywords
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