Nitrogen incorporation rate, optimal growth temperature, and AsH3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-source
- 1 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 351-354
- https://doi.org/10.1016/s0022-0248(98)01350-5
Abstract
No abstract availableKeywords
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