Fabrication of conductive single-crystal semiconductor nanoscale electromechanical structures

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Abstract
As an application of the self-organization growth technique to the fabrication of nanoscale mechanical structures, we selectively etched a GaAs sacrificial layer under InAs wires preferentially grown on bunched steps on misoriented GaAs (110) surfaces, which led to the formation of single-crystal InAs nanoscale cantilevers. Their lengths, widths and thickness are typically 50–300, 20–100 and 10–30 nm, respectively. The structures are expected to be electrically conductive and to be promising for use in fabricating single-crystal nanoelectromechanical systems.