Properties of polycrystalline ZnSe thin films grown by ion-beam deposition
- 1 December 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (11) , 5567-5570
- https://doi.org/10.1063/1.346991
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Iodine-doping effects on the vapor-phase epitaxial growth of ZnSe on GaAs substratesJournal of Applied Physics, 1990
- Growth of zinc selenide thin filmsJournal of Materials Science Letters, 1989
- Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1989
- Controlled conductivity in iodine-doped ZnSe films grown by metalorganic vapor-phase epitaxyJournal of Applied Physics, 1989
- Electrical and Luminescent Properties of In-Doped ZnSe Grown by Low-Pressure Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1987
- Effects of indium diffusion on the properties of ZnSe:Mn dc thin-film electroluminescent devicesJournal of Applied Physics, 1985
- Polycrystalline zinc selenide films deposited by a low-temperature close-spaced-vapor-transport methodJournal of Applied Physics, 1984
- Conduction mechanism in low-resistivity n-type ZnSe prepared by organometallic chemical vapor depositionJournal of Applied Physics, 1982
- Molecular beam epitaxial growth of low-resistivity ZnSe filmsApplied Physics Letters, 1979
- Low Temperature Silicon Epitaxy by Partially Ionized Vapor DepositionJapanese Journal of Applied Physics, 1977