High-efficiency GaAs solar cells grown on passive-Ge substrates by atmospheric pressure OMVPE
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 133-136 vol.1
- https://doi.org/10.1109/pvsc.1991.169196
Abstract
High-efficiency (up to 19%, AM0) GaAs solar cells on passive-Ge substrates have been grown by an atmospheric pressure OMVPE. A systematic study was carried out to find the optimum growth conditions. Results indicate that only a narrow temperature window (600-630 degrees C) for the initial layer growth will give the passive-Ge junction together with good GaAs solar cells.Keywords
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