Si as a diffusion barrier for Ge/GaAs heterojunctions
- 23 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (17) , 1673-1675
- https://doi.org/10.1063/1.103113
Abstract
We compare the electrical characteristics, before and after annealing, of p-Ge/N-GaAs heterojunction diodes to similar diodes which incorporate a nominally 10 Å layer of pseudomorphic Si at the Ge/GaAs interface. Both types of diodes exhibit excellent current-voltage characteristics before annealing. Diodes having no Si interlayer show significant degradation after a 20 min anneal at 640 °C. Diodes incorporating the Si interlayer retain excellent diode characteristics after a 20 min anneal at temperatures as high as 720 °C.Keywords
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