Breakdown behavior of GaAs/AlGaAs HBTs

This publication has 25 references indexed in Scilit:

• Ultra-high speed AlGaAs/GaAs heterojunction bipolar transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Fully self-aligned AlGaAs/GaAs heterojunction bipolar transistors for high-speed integrated-circuits application
  IEEE Transactions on Electron Devices, 1988
• Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1988
• Numerical study of emitter-base junction design for AlGaAs/GaAs heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1988
• High-frequency performance limitations of millimeter-wave heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1988
• A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure
  IEEE Transactions on Electron Devices, 1988
• AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process
  IEEE Electron Device Letters, 1987
• Optimizing N-p-n and P-n-p heterojunction bipolar transistors for speed
  IEEE Transactions on Electron Devices, 1987
• Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect Junctions
  Journal of Applied Physics, 1963
• Problems related to p-n junctions in silicon
  Solid-State Electronics, 1961