Surface microroughness observed by scanning tunneling microscope and improved device characteristics of GaAs/Si grown with AlGaAs/AlGaP intermediate layers
- 14 December 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (24) , 2923-2925
- https://doi.org/10.1063/1.108023
Abstract
Scanning tunneling microscope images show that a smoother surface and heterointerface can be obtained in a GaAs/Si grown with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs), which result from a two‐dimensional growth at an initial stage. By using the AlGaAs/AlGaP ILs, the device characteristics are improved; a saturation electron velocity of 1.6×107 cm/s for a GaAs metal‐semiconductor field‐effect transistor, and an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23 cm−1, a differential gain coefficient of 1.9 cm/A, and a transparency current of 266 A/cm2 for a single quantum‐well laser diode.Keywords
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