Metalorganic chemical vapor deposition growth of undoped GaAs with a low electron concentration on a Si substrate
- 17 December 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (25) , 2669-2671
- https://doi.org/10.1063/1.103796
Abstract
We have successfully grown an undoped GaAs layer with a low electron concentration on Si by metalorganic chemical vapor desposition (MOCVD). The back and side edges of the Si substrate were covered with a Si3N4/SiO2 stacked layer to suppress Si incorporation into GaAs by the gas phase transport mechanism during the MOCVD growth. A 3‐μm‐thick undoped GaAs layer with an electron concentration of 3×1014 cm−3, as low as the electron concentration of a GaAs layer grown on a GaAs substrate, was grown on the Si substrate even at 750 °C.Keywords
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