Conductance oscillations and source-drain-limited conduction in Si MOSFETs
- 14 December 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (23) , L897-L900
- https://doi.org/10.1088/0022-3719/12/23/005
Abstract
Presents results showing that near threshold, and in the helium range of temperatures, the conductance of the Si MOSFET can be determined by the source and drain. The occurrence of this effect is dependent on device fabrication conditions, and possibly on the doping profile in the source and drain regions. Carrier transport in these regions occurs in a surface accumulation layer, and can display the conductance oscillations first observed in GaAs structures. The oscillations are found for both p- and n-type Si, and may be accompanied by fine structure in the conductance.Keywords
This publication has 6 references indexed in Scilit:
- Conductance oscillations in a two-dimensional impurity bandJournal of Physics C: Solid State Physics, 1979
- The radiation hardness of the Si-SiO2interface and carrier localisation in the inversion layerJournal of Physics C: Solid State Physics, 1977
- The Anderson transition in silicon inversion layers: the origin of the random field and the effect of substrate biasProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1977
- Fine structure in the field effect mobility of MOS transistorsSurface Science, 1976
- The Anderson transition in silicon inversion layersSurface Science, 1976
- Low temperature effects in Si FETsSolid-State Electronics, 1965