Polarity-dependent memory switching in devices with SnSe and SnSe2 crystals
- 15 May 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (10) , 479-481
- https://doi.org/10.1063/1.1655019
Abstract
Polarity‐dependent memory switching has been observed in devices of crystalline SnSe and SnSe2 with aluminum contacts. Two types of low‐level switching (1 V/1 mA) with reversed polarity dependence can be obtained in suitably formed devices of either material. In addition, a high‐level (100 V/10 mA) polarized memory switching can be obtained in either device. The low‐level switching appears to involve an electronic process, while the high‐level switching is associated with an electrothermally driven mass transport.Keywords
This publication has 8 references indexed in Scilit:
- Irreversible switching of conductivity states in ZnTe/Ge heterojunctionsSolid-State Electronics, 1973
- Current-voltage characteristics of p-Ge/n-CdS heterojunction diodesApplied Physics Letters, 1973
- Bistable Switching in Metal-Semiconductor JunctionsApplied Physics Letters, 1972
- Switching and Memory Characteristics of ZnSe - Ge HeterojunctionsJournal of Applied Physics, 1971
- Observation of ‘ON’ and ‘OFF’ states of the polarized (letter ‘8’) memory effects in CdS and CdSe thin filmsSolid State Communications, 1971
- SWITCHING AND MEMORY IN ZnSe–Ge HETEROJUNCTIONSApplied Physics Letters, 1970
- Fundamental Optical Absorption in Snand SnPhysical Review B, 1966
- Electrical Properties of Stannous SelenideJournal of the Physics Society Japan, 1959