The Effects of Polishing Damage and Oxygen Concentration on Gate Oxide Integrity in Silicon Crystals
- 1 May 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (5R)
- https://doi.org/10.1143/jjap.32.1879
Abstract
The gate oxide integrity (GOI) of FZ crystals is independent but the GOI of CZ crystals is strongly dependent on the polishing conditions which means whether mechanical or chemical components are dominant. The GOI of CZ crystals is clearly improved by etching of surface layers, that is, 0.5 µm in depth by mixed acid and 0.04 µm by NH4OH/H2O2solution. MCZ crystals with low concentration of oxygen (∼10 ppma) always show higher GOI yields than CZ crystals with high concentration of oxygen (∼18 ppma). The above etching effects suggest that the polishing damages existing in as polished surfaces cause the GOI degradations together with the oxygen atoms in silicon crystals.Keywords
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