Redistribution of implanted oxygen and carbon in silicon

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Abstract
This paper reports new experimental results on the measurements of oxygen and carbon in silicon. 18O and 13C in‐depth distribution has been measured in silicon as a function of postimplant furnace and laser annealing using secondary ion mass spectroscopy. Analysis shows that a complicated structure appears in the 18O atomic profile following 900–1100 °C furnace annealing. The 18O redistribution is substantially caused by implantation‐induced damage gettering of 18O in silicon. Because of a fast annihilation of displacement damages by laser annealing, any complicated redistribution was not observed in the laser‐annealed 18O atomic profile. No such structure was observed in the furnace‐ and laser‐annealed 13C atomic profiles, implying some differences in the atomic behavior of carbon and oxygen in silicon.