Characterization of W-Band CW Tunnett Diode
- 1 September 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1496-1501
- https://doi.org/10.1109/euma.1991.336557
Abstract
GaAs TUNNETT diodes grown by MBE are investigated at W-band frequencies. The diode structure, output power, conversion efficiency and noise behaviour are presented. The maximum cw rf output power is 1S mW with 2% efficiency at 93 GHz. At a frequency of 2S kHz off carrier the FM N/C ratio is -78 dBc/Hz. A minimum noise measure M of 19 dB is obtained at power levels of about 4 mW. For the application as a self-oscillating mixer the minimum detectable signal was measured to be as low as -140 dBm with a conversion gain of 20 dB at -20 dBm output power.Keywords
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