Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers
- 1 June 2002
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 91 (11) , 8979-8985
- https://doi.org/10.1063/1.1473666
Abstract
Using strain analysis on high resolution electron microscopy images and finite element modeling of InGaN quantum wells (QWs), it is shown that the In composition changes inside the layers can be accurately determined. The analyzed samples were nominally grown with 15%–17% In composition by molecular beam or metalorganic vapor phase epitaxy. Inside these QWs, the In composition is not homogeneous. Finite element modeling strongly suggests that the measured strain corresponds most probably to InN clusters whose size depends on the growth method.This publication has 19 references indexed in Scilit:
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