An analytical model for the inverse narrow-gate effect of a metal-oxide-semiconductor field-effect transistor
- 15 March 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (6) , 2387-2392
- https://doi.org/10.1063/1.337954
Abstract
A closed-form analytical expression is derived to predict the threshold voltage of a narrow-gate metal-oxide-semiconductor field-effect transistor with a fully recessed field-isolation structure. The calculation is based on a simple conformal transform and a physical model employing the depletion approximation. The physical origin of the inverse narrow-gate effect is mentioned. Threshold-voltage variations under the influence of various physical parameters are discussed, and a comparison with published data shows that the present model is useful.This publication has 8 references indexed in Scilit:
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