Low frequency noise in 4H silicon carbide

This publication has 23 references indexed in Scilit:

• A 4.5 kV 6H silicon carbide rectifier
  Applied Physics Letters, 1995
• Nature of the 1/f noise in 6H-SiC
  Semiconductor Science and Technology, 1994
• 4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz
  IEEE Electron Device Letters, 1994
• SiC devices: physics and numerical simulation
  IEEE Transactions on Electron Devices, 1994
• 2000 V 6H-SiC p-n junction diodes grown by chemical vapor deposition
  Applied Physics Letters, 1994
• Low-frequency noise spectroscopy
  IEEE Transactions on Electron Devices, 1994
• 1/f noise sources
  IEEE Transactions on Electron Devices, 1994
• 6H-silicon carbide devices and applications
  Physica B: Condensed Matter, 1993
• Silicon carbide UV photodiodes
  IEEE Transactions on Electron Devices, 1993
• First SiC dynistor
  Electronics Letters, 1988