Charge transfer in chromium-doped GaAs
- 15 April 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 23 (8) , 3920-3932
- https://doi.org/10.1103/physrevb.23.3920
Abstract
Results on the absorption and electron paramagnetic resonance measurements on chromium-doped GaAs are reported. For -type samples the main optical transitions are shown to be due to a photoionization process which has been measured as a function of temperature and hydrostatic pressure. A model, developed in the configurational diagram scheme and using two types of relaxation, is proposed to explain the experimental results.
Keywords
This publication has 27 references indexed in Scilit:
- Chromium as a hole trap in GaP and GaAsApplied Physics Letters, 1980
- Absorption and luminescence of Cr2+(d4) in II-VI compoundsJournal of Physics C: Solid State Physics, 1979
- Properties of Cr deep levels in:CrPhysical Review B, 1979
- Measurement of the chromium concentration in semi-insulating GaAs using optical absorptionJournal of Applied Physics, 1979
- Deep centre photoluminescence spectra of GaAs(Cr, Si)Journal of Physics C: Solid State Physics, 1978
- EPR of() in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversionPhysical Review B, 1977
- Photoluminescence from deep centers in GaAsSolid State Communications, 1976
- Optical absorption on localized levels in gallium arsenidePhysical Review B, 1974
- EPR ofin II-VI latticesPhysical Review B, 1974
- Infrared Absorption in Some II-VI Compounds Doped with CrPhysical Review B, 1970