High-speed operation of static binary frequencydivider using resonanttunnelling diodes and HEMTs
- 8 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (1) , 70-71
- https://doi.org/10.1049/el:19980103
Abstract
A new circuit technology using resonant tunnelling diodes and HEMTs makes the toggle frequency ftoggle of a static binary frequency divider close to the cutoff frequency ft of the used 0.7 µm-gate HEMTs. ftoggle and ft are 34 and 38 GHz, respectively. This technology is promising for use in high-speed logic circuits.Keywords
This publication has 4 references indexed in Scilit:
- High-speed operation of resonant tunnelling flip-flopcircuit employing MOBILE (monostable-bistable transition logic element)Electronics Letters, 1997
- InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devicesIEEE Electron Device Letters, 1996
- In 0.53 Ga 0.47 As/AlAs resonant tunnellingdiodes withswitching time of 1.5 psElectronics Letters, 1995
- Functions and applications of monostable-bistable transition logic elements (MOBILE's) having multiple-input terminalsIEEE Transactions on Electron Devices, 1994