The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors
- 31 October 2007
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 84 (9-10) , 2014-2017
- https://doi.org/10.1016/j.mee.2007.04.004
Abstract
No abstract availableKeywords
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