Low-energy ion-assisted epitaxy of InGaAsSb on InP (100)
- 1 June 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (11) , 7904-7906
- https://doi.org/10.1063/1.347477
Abstract
InGaAsSb alloys were grown within the solid‐phase miscibility gap, lattice matched to InP (100) substrates, using ion‐assisted deposition. The alloy structure and properties were strongly dependent upon the energy E of Ar ions bombarding the growingfilm.Filmsdeposited with E≤16 eV exhibited multiple (400) x‐ray diffraction peaks and relatively low electron mobilities, indicating that there was significant alloy decomposition. Increasing E to 19–21 eV yielded single, sharp (400) x‐ray peaks and increased the electron mobility, showing that ion irradiation suppressed decomposition. E≳22 eV resulted in ion damage as indicated by decreased mobilities and broadening of the x‐ray peaks.This publication has 23 references indexed in Scilit:
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