Atomic geometry of Ge(111) √3 × √3R30°-Ag determined by low-energy electron diffraction
- 15 May 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (19) , 13483-13487
- https://doi.org/10.1103/physrevb.49.13483
Abstract
We have carried out a quantitative low-energy electron-diffraction intensity analysis of the Ge(111) √3 × √3 R30°-Ag structure. It is found that the Ag atoms arrange according to a honeycomb chained trimer model (HCT) similar to the situation of Si(111) √3 × √3 R30°-Ag. This result shows that the Ge-Ge bond is stronger than the Ag-Ag bond on the surface, thus causing the HCT structure to form.Keywords
This publication has 35 references indexed in Scilit:
- Low-energy electron diffraction as a direct identification technique: Atomic structures of Ag- and Li-induced Si(111)-(√3 × √3 )R30°Physical Review B, 1993
- Reexamination of the Ag/Si(111)-√3 × √3 surface by scanning tunneling microscopyPhysical Review B, 1992
- Density of silicon atoms in the Si(111)√3 × √3-Ag structure studied by in situ UHV reflection electron microscopySurface Science, 1991
- Structure of the (√3 × √3 )R30° Ag/Si(111) surface from first-principles calculationsPhysical Review Letters, 1991
- Structure analysis of the Si(111)√3 × √3R30°-Ag surfacePhysical Review Letters, 1991
- Structure analysis of Si(111)-(√3 × √3 )R30°/Ag using x-ray standing wavesPhysical Review B, 1991
- Rheed intensity analysis of Si(111)√3×√3-Ag structureApplied Surface Science, 1990
- The structure of Si(111)-()R30°-Ag determined by surface X-ray diffractionSurface Science, 1989
- Study on the Si(111) √3×√3-Ag Surface Structure by X-Ray DiffractionJapanese Journal of Applied Physics, 1988
- Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status reportSurface Science, 1983