A New Model Silicon/Silicon Oxide Interface Synthesized from H10Si10O15 and Si(100)- 2×1
- 1 March 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (3S)
- https://doi.org/10.1143/jjap.36.1622
Abstract
A model silicon/silicon oxide interface, synthesized from the spherosiloxane H10Si10O15 and Si(100)-2×1, has been characterized by study of the Si 2p core-levels and valence band region using soft X-ray photoemission. In addition, the intact H10Si10O15 cluster was condensed at -160° C onto Si(111)-H and characterized. The measured photoemission features are in good agreement with the results of previous model studies.Keywords
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