Double Injection in Trap-Free Silicon at Low Operating Points
- 1 December 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (13) , 5312-5315
- https://doi.org/10.1063/1.1657388
Abstract
Double injection currents are measured over the temperature range from 340° to 200°K with plane parallel metal‐semiconductor‐metal structures. It is shown that, in the absence of traps, the injecting junction limits the current at low operating points. The current‐voltage characteristics are analyzed considering the property of the injection contact.This publication has 9 references indexed in Scilit:
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