Thermal transport properties of gold-covered thin-film silicon dioxide
- 5 June 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Components and Packaging Technologies
- Vol. 26 (1) , 80-88
- https://doi.org/10.1109/tcapt.2003.811467
Abstract
Due to continued miniaturization, the performance and reliability of electronic devices composed of multiple thin layers of material are highly dependent on effective thermal management. Since the thermal properties of thin films, such as SiO/sub 2/, can vary considerably from bulk values, the determination of those properties (as well as the interface resistance between SiO/sub 2/ and adjacent layers) is critical for the purposes of design. In this work, a transient thermo-reflectance system has been employed to measure the thermal characteristics of thin-film SiO/sub 2/ layers. Results show that for layers of SiO/sub 2/ in the range of 100-1000 /spl Aring/, the intrinsic thermal conductivity (TC) is independent of thickness and smaller than the traditionally reported value of bulk silicon dioxide (1.4 W/m-K). The intrinsic value was measured to be around 90% (1.27 W/m-k) and 75% (1.05 W/m-k) of the latter bulk value for thermally grown (TG) and ion beam sputtered (IBS) oxides, respectively. The thermal interface resistances of TG and IBS SiO/sub 2/ films were measured at 1.68 /spl times/ 10/sup -8/ m/sup 2/-K/W and 2.58 /spl times/ 10/sup -8/ m/sup 2/-K/W, respectively. If a chromium film of around 100 /spl Aring/ is deposited between the gold and SiO/sub 2/ layers, the interface thermal resistance improves to 0.78 /spl times/ 10/sup -8/ m/sup 2/-K/W for TG films and 1.15 /spl times/ 10/sup -8/ m/sup 2/-K/W for IBS films. Thus, the effective thermal resistance of SiO/sub 2/ thin-films (i.e., with interface effects) is up to one order of magnitude smaller than the values reported for bulk SiO/sub 2/.Keywords
This publication has 28 references indexed in Scilit:
- Thermal conductivity measurements of thin-film silicon dioxidePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Heat flow and lattice vibrations in glassesPublished by Elsevier ,2002
- Interface Effect on the Transverse Thermal Conductivity of SiO2 Films Deposited on SiliconMRS Proceedings, 1998
- HEAT TRANSPORT IN DIELECTRIC THIN FILMS AND AT SOLID-SOLID INTERFACESMicroscale Thermophysical Engineering, 1997
- Thermal conduction in metallized silicon-dioxide layers on siliconApplied Physics Letters, 1994
- Prediction and Measurement of the Thermal Conductivity of Amorphous Dielectric LayersJournal of Heat Transfer, 1994
- Effect of thickness on the transverse thermal conductivity of thin dielectric filmsJournal of Applied Physics, 1994
- Annealing-temperature dependence of the thermal conductivity of LPCVD silicon-dioxide layersIEEE Electron Device Letters, 1993
- Estimate of phonon thermal transport in amorphous materials above 50 KPhysical Review B, 1990
- Lattice Vibrations and Heat Transport in Crystals and GlassesAnnual Review of Physical Chemistry, 1988