Photoluminescence of defect complexes in silicon
- 25 May 2005
- book chapter
- Published by Springer Nature
- p. 120-133
- https://doi.org/10.1007/3-540-11986-8_10
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Optical properties of copper in silicon: Excitons bound to isoelectronic copper pairsPhysical Review B, 1982
- Photoluminescence from a thermally induced indium complex in siliconJournal of Luminescence, 1981
- Excitation spectroscopy on the P, Q, R isoelectronic lines in indium doped siliconSolid State Communications, 1981
- Observation of long lifetime lines in photoluminescence from Si: InSolid State Communications, 1979
- Bound Excitons in SemiconductorsPublished by Springer Nature ,1979
- A high resolution investigation of the recombination radiation from Si containing the acceptors B, Al, Ga, In and TlJournal of Luminescence, 1977
- Auger lifetimes for excitons bound to neutral donors and acceptors in SiPhysica Status Solidi (b), 1977
- Bound exciton lifetimes for acceptors in SiSolid State Communications, 1977
- Recombination luminescence from ion implanted siliconRadiation Effects, 1976
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960