Lateral and vertical scaling of a QSA HBT for a 0.13μm 200GHz SiGe:C BiCMOS technology
- 23 December 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A 200 GHz F/sub t/ SiGe:C HBT has been integrated into a 0.13 /spl mu/m BiCMOS technology. A previous generation low complexity quasi self-aligned architecture (QSA) is scaled down both in a lateral and vertical way. Lateral sizing is obtained by using present-day step and scan tools. Vertical sizing is achieved by reducing the thermal budget of the active module and by an aggressive scaling of the SiGe:C base epitaxial layer. A deep trench module, featuring a thick oxide liner, has been developed. Excellent DC parameters and peak Ft/Fmax values of 200/160 GHz are demonstrated. The CMOS device characteristics remain unchanged by applying low thermal budget processing in the bipolar module.Keywords
This publication has 4 references indexed in Scilit:
- Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Ultra low power SiGe:C HBT for 0.18 μm RF-BiCMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Transistor design and application considerations for < 200-GHz SiGe HBTsIEEE Transactions on Electron Devices, 2003
- BiCMOS7RF: a highly-manufacturable 0.25-/spl mu/m BiCMOS RF-applications-dedicated technology using non selective SiGe:C epitaxyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003