Formation of a high-crystalline-quality SiGeB layer by Ge and B co-implantation
- 1 July 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 59-60, 1113-1115
- https://doi.org/10.1016/0168-583x(91)95777-b
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Electrical and material quality of Si/sub 1-x/Ge/sub x//Si p-N heterojunctions produced by limited reaction processingIEEE Electron Device Letters, 1989
- Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single CrystalsJournal of Applied Physics, 1970