The electrical and electrochemical properties of gold-plated InP
- 1 September 1993
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (5) , 3238-3245
- https://doi.org/10.1063/1.354598
Abstract
The electrical properties of InP/Au dry contacts and the influence of electrodeposited gold on the electrochemical properties of InP electrodes were studied. From current and impedance measurements on InP/Au dry contacts it is concluded that the chemical composition of an interfacial layer strongly influences the electrical characteristics. Furthermore, interface states are shown to play an important role. The interfacial layer and the interface states also determine to a large extent the electrochemical properties of the gold-plated electrodes.This publication has 25 references indexed in Scilit:
- Hot Electron Reduction at n‐Si/Au Thin Film ElectrodesJournal of the Electrochemical Society, 1992
- Simple interface-layer model for the nonideal characteristics of the Schottky-barrier diodeSolid-State Electronics, 1992
- Defects introduced in InP by mechanical polishing and studied by means of Au- and Alp-InP Schottky barriersSolid-State Electronics, 1986
- Formation de l'interface métal/InP et de diodes Schottky sur InPRevue de Physique Appliquée, 1984
- On interfacial charges in the oxide layer of mis-type Ag- and Au-n GaAs Schottky barriersSolid-State Electronics, 1983
- A reevaluation of the meaning of capacitance plots for Schottky-barrier-type diodesJournal of Applied Physics, 1983
- Photocathodic reactions at p-InPSolar Energy Materials, 1983
- Effects of thin oxide layers on the characteristics of GaAs MIS solar cellsPhysica Status Solidi (a), 1980
- Metal-silicon Schottky barriersSolid-State Electronics, 1968
- FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURESApplied Physics Letters, 1966