Defects in amorphous silicon germanium alloys
- 1 January 1988
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 139-142 vol.1
- https://doi.org/10.1109/pvsc.1988.105675
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- The Role of Structural Inhomogeneities on the Transport Properties of a-SiGe:HMRS Proceedings, 1988
- Electronic states in the gap of amorphous silicon-germanium alloysJournal of Non-Crystalline Solids, 1987
- Amorphous silicon, germanium, and silicon-germanium alloy thin-film transistor performance and evaluationApplied Physics Letters, 1987
- Applications and defects in amorphous siliconJournal of Non-Crystalline Solids, 1987
- Electrical transport in amorphous hydrogenated Ge/Si superlatticesApplied Physics Letters, 1986