Low-loss extended cavity lasers by dielectric cap disordering with a novel masking technique
- 1 April 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (4) , 372-373
- https://doi.org/10.1109/68.212668
Abstract
Low-loss extended cavity lasers fabricated in GaAs/AlGaAs quantum-well material busing silica cap disordering and strontium fluoride selective area masking are described. Losses as low as 17 dBcm/sup -1/ were measured in the passive slab waveguide sections. Lasing action was achieved in devices with passive sections of up to 2 mm in length.Keywords
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