Integrated millimeter-wave photonic probes for an on-wafer network analyzer
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A new network analyzer based on ultrafast optoelectronic techniques is presented. It uses integrated and packaged mm-wave-photonic active probes and enables on-wafer measurements of scattering parameters with a bandwidth exceeding 300 GHz.Keywords
This publication has 6 references indexed in Scilit:
- 30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 1-157 GHz InP HEMT traveling-wave amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHzIEEE Photonics Technology Letters, 1998
- Characterization of > 300 GHz Transistors Using a Novel Optoelectronic Network AnalyzerPublished by Springer Nature ,1998
- Optoelectronic techniques for ultrafast device network analysis to 700 GHzOptical and Quantum Electronics, 1996
- Millimeter-wave on-wafer waveform and network measurements using active probesIEEE Transactions on Microwave Theory and Techniques, 1995