Pulsed laser evaporation of Cd3As2
- 1 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3) , 339-341
- https://doi.org/10.1063/1.94752
Abstract
A pulsed Nd:yttrium aluminum garnet (YAG) laser, power density 4–10×107 W/cm2, was used to prepare thin films of Cd3As2 by evaporation onto room-temperature substrates. The net deposition rate was 105 Å/s. The film microstructure was composed of amorphous agglomerates, 600–2000 Å in size. The films obtained with power density 7–10×107 W/cm2 were stoichiometric and they had electron concentrations of 2.6–10×1018 cm−3 and electron mobilities of 210–520 cm2/Vs at 300 K.Keywords
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