On High-Electric-Field Conductivity inn- Type Silicon

The theoretical results of Basu and Nag on the high-field mobility of electrons in Si for any arbitrary direction of field are discussed, taking into account the intervalley electron-phonon scattering mechanisms. An up-to-date picture of these scattering mechanisms is outlined and shown to fit satisfactorily the electron drift velocity between 77 and 300°K, from the Ohmic up to the saturation region. Nag, Paria, and Basu's (NPB) ratio of cool-to-hot valley population for electric fields along the $〈100〉$ direction is also successfully interpreted.