Interaction of Deuterium with Buried Oxides in Silicon
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Effective removal of oxygen from Si layer on buried oxide by implantation of hydrogenJournal of Applied Physics, 1987
- Interaction of deuterium gas with dry SiO2 on Si: An ion-beam studyJournal of Applied Physics, 1987
- Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structuresJournal of Applied Physics, 1985
- Ion-beam profiling of3He in tritium-exposed type 304l and type 21-6-9 stainless steelsMetallurgical Transactions A, 1983
- Annealing of surface states in polycrystalline-silicon–gate capacitorsJournal of Applied Physics, 1977
- On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperaturesPhysica, 1956