Effective removal of oxygen from Si layer on buried oxide by implantation of hydrogen

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Abstract
Effects of implanted hydrogen on removal of oxygen from a Si top layer on buried oxide by the post‐implantation annealing were studied. The Si top layer and the buried oxide layer were analyzed by secondary ion mass spectroscopy (SIMS) and cross‐sectional transmission electron microscopy (X‐TEM). With implanted hydrogen, oxygen concentration in the Si top layer could be reduced below the SIMS detection limit by annealing at relatively lower temperature 1150 °C for 2 h in an ambient of N2. It is verified by X‐TEM that the Si top layer is precipitate‐free. An amount of hydrogen comparable to the amount of oxygen contained in the Si top layer is needed to remove the oxygen completely. This effective removal of oxygen is attributed to the suppression of oxygen precipitation and the enhanced dissolution of oxide precipitates by hydrogen.