Observations of double doped, low dislocation density InP by transmission electron microscopy
- 30 September 1982
- journal article
- Published by Elsevier in Materials Letters
- Vol. 1 (2) , 77-79
- https://doi.org/10.1016/0167-577x(82)90012-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A Study of Inclusions in Indium PhosphideJournal of the Electrochemical Society, 1982
- The characterization of highly-zinc-doped InP crystalsApplied Physics Letters, 1979
- Impurity effect on the growth of dislocation-free InP single crystalsJournal of Applied Physics, 1976