Picosecond photorefractive and free-carrier transient energy transfer in GaAs at 1 mu m
- 1 February 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 24 (2) , 289-303
- https://doi.org/10.1109/3.125
Abstract
The strength, formation, and decay of photorefractive and free-carrier gratings written in GaAs by 43-ps pulses at a wavelength of 1 mu m are investigated using picosecond-time-resolved two-beam coupling, transient grating, and degenerate-four-wave-mixing techniques. Photorefractive weak-beam gains of a few percent are measured at fluences of a few pJ/ mu m/sup 2/ (0.1 mJ/cm/sup 2/), and gain from transient energy transfer is observed at fluences larger than approximately 10 mJ/cm/sup 2/ in the beam-coupling experiments. The roles of saturation and two-photon absorption in determining the final electron, hole, and ionized-donor populations and the roles of drift and diffusion in determining the quasi-steady-state photorefractive and free-carrier index modulations are discussed.Keywords
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