Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

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Abstract
We have carried out the microscopic calculations of Auger recombination and interband absorption in InGaAsSb/AlGaAsSb quantum-well (QW) lasers operating within wavelength range 2.3–2.6 μm. The calculations show that the dominant Auger process in these laser structures is the process with hole excitation from the quantized level in QW to the continuous spectrum. The total Auger coefficient shows a weak temperature dependence. Based on the results of calculations and recent measurements of the heterobarrier hole leakage current and modal gain in 2.3 μm InGaAsSb QW lasers, we have calculated the temperature dependence of the threshold current. It was shown that a significant value of the Auger coefficient and the temperature dependence of laser gain are the major factors determining the temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb QW lasers.